ILA100200N
1.0 – 2.0 GHz LOW NOISE AMPLIFIER
Summary of the key electrical specifications at 25°C
Index |
Testing Item |
Symbol |
Test Constraints |
Min |
Nom |
Max |
Unit |
1 |
|
BW |
50 Ohm Impedance |
1.0 |
|
2.0 |
GHz |
2 |
Gain |
S21 |
1.0 – 2.0 GHz |
30 |
33 |
36 |
dB |
3 |
Gain Variation |
DG |
1.0 – 2.0 GHz |
|
+/- 1.0 |
|
dB |
4 |
VSWR |
SWRi |
1.0 – 2.0 GHz, all RF ports |
|
1.35:1 |
1.5:1 |
Ratio |
5 |
Reverse Isolation |
S12 |
1.0 – 2.0 GHz |
|
40 |
|
dB |
6 |
Noise Figure |
NF |
1.0 – 2.0 GHz |
|
1.0 |
1.3 |
dB |
7 |
Output Power 1dB Compression Point |
P1dB |
1.0 – 2.0 GHz |
9 |
12 |
|
dBm |
8 |
Output-Third-Order Interception Point |
IP3 |
Two-Tone, Pout = 0 dBm each, 1 MHz Separation |
22 |
25 |
|
dBm |
9 |
Current Consumption |
Idd |
Vdd = +12.0 V |
|
40 |
|
mA |
10 |
Power Supply Operating Voltage |
Vdd |
|
+8 |
+12 |
+16 |
V |
11 |
Operating Temperature |
To |
|
-40 |
|
+85 |
oC |
12 |
Thermal Resistance |
Rth,c |
Junction to case |
|
|
215 |
oC/W |
dBm
8
Output-Third-Order Interception Point
IP3
Two-Tone, Pout = 0 dBm each, 1 MHz Separation
22
25
dBm
9
Current Consumption
Idd
Vdd = +12.0 V
40
mA
10
Power Supply Operating Voltage
Vdd
+8
+12
+16
V
11
Operating Temperature
To
-40
+85
oC
12
Thermal Resistance
Rth,c
Junction to case
215
oC/W
dBm
8
Output-Third-Order Interception Point
IP3
Two-Tone, Pout = 0 dBm each, 1 MHz Separation
22
25
dBm
9
Current Consumption
Idd
Vdd = +12.0 V
40
mA
10
Power Supply Operating Voltage
Vdd
+8
+12
+16
V
11
Operating Temperature
To
-40
+85
oC
12
Thermal Resistance
Rth,c
Junction to case
215
oC/W